发明名称 |
Method and apparatus for identifying failure sites on IC chips |
摘要 |
The present invention provides a method for identifying failure sites on a defective IC chip by utilizing a glass substrate equipped with a heating device and then coating a liquid crystal material layer on top. The liquid crystal device can be positioned in contact, or immediately adjacent to a surface of an IC device to be detected. After the liquid crystal temperature is raised to just below its transition temperature, a voltage signal can be fed into the IC device to trigger an overheating at a short or leakage to raise the liquid crystal material immediately adjacent to the short or leakage to a temperature above its transition temperature. Hot spots are thus produced to appear as bright spots for easy identification under an optical microscope.
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申请公布号 |
US6403386(B1) |
申请公布日期 |
2002.06.11 |
申请号 |
US20000645080 |
申请日期 |
2000.08.24 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD |
发明人 |
LIU CHIN-KAI |
分类号 |
G01R31/311;(IPC1-7):H01L21/66 |
主分类号 |
G01R31/311 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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