发明名称 Method and apparatus for identifying failure sites on IC chips
摘要 The present invention provides a method for identifying failure sites on a defective IC chip by utilizing a glass substrate equipped with a heating device and then coating a liquid crystal material layer on top. The liquid crystal device can be positioned in contact, or immediately adjacent to a surface of an IC device to be detected. After the liquid crystal temperature is raised to just below its transition temperature, a voltage signal can be fed into the IC device to trigger an overheating at a short or leakage to raise the liquid crystal material immediately adjacent to the short or leakage to a temperature above its transition temperature. Hot spots are thus produced to appear as bright spots for easy identification under an optical microscope.
申请公布号 US6403386(B1) 申请公布日期 2002.06.11
申请号 US20000645080 申请日期 2000.08.24
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD 发明人 LIU CHIN-KAI
分类号 G01R31/311;(IPC1-7):H01L21/66 主分类号 G01R31/311
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