| 摘要 |
Subcollector layers or emitter layers constituting a bipolar transistor having different thicknesses form a two-layered structure. A resistor layer is formed at the same as one of the subcollector layers or one of the emitter layers, from the same material as that of the subcollector layer or emitter layer. A resistor is formed by the resistor layer made of the same material as that of the subcollector layer or emitter layer. A resistor with a desired resistance can be integrally built into a semiconductor device without adversely affecting the characteristics of a bipolar transistor.
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