发明名称 Defect management for interface to electrically-erasable programmable read-only memory
摘要 A circuit interfaces a host processor to an electrically-erasable memory in a memory space, such as a flash media. The memory space defines a plurality of segments, and each of the segments includes a plurality of sectors. A media interface circuit regulates access by the host processor to the electrically-erasable memory in the memory space. Sector valid indication reading circuitry reads at least one sector valid indication from a segment of the media. Sector valid determination circuitry determines a non-defective sector from the at least one sector valid indication read. Sector level segment defect map indication reading circuitry reads a sector-level segment defect map from the sector determined to be non-defective. Sector defect determination circuitry determines, from the sector-level segment defect map read, sectors within the segment that are valid. Access regulation circuitry regulates access to the memory space at least in part on the determinations by the sector defect determination circuitry.
申请公布号 US6405323(B1) 申请公布日期 2002.06.11
申请号 US19990281357 申请日期 1999.03.30
申请人 SILICON STORAGE TECHNOLOGY, INC. 发明人 LIN FRANK FONG-LONG;XING DONGSHENG
分类号 G06F3/06;G06F11/00;G11C16/34;G11C29/00;(IPC1-7):G06F11/00 主分类号 G06F3/06
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