发明名称 Circuit for in-system programming of memory device
摘要 A programming circuit is coupled to an input/output pin of a device and is operative to generate a selected one of a plurality of electrical stimuli, such as a programming voltage, high and low logic levels, and a high impedance output, to the device in selected electrical state, without affecting normal device operation. The programming circuit includes a switchmode power converter, a linear regulator, and a control circuit. The programming voltage is generated by the switchmode power converter only when required for programming the device. The linear regulator includes a transistor having its collector-emitter path coupled in circuit with the switchmode converter and an output node, as well as to a voltage divider network. The voltage divider network is coupled to the control input of a precision shunt regulator device, which supplies a base reference for the transistor to establish the value of a voltage to be applied provided from the output node to the device. The base of the linear regulator's transistor is also controllably coupled to ground through the collector-emitter path of a steering transistor of the control circuit. The regulator's output node is also controllably coupled to ground through the collector-emitter path of a steering transistor of the control circuit. The output node is coupled to a programming (I/O) pin of the device.
申请公布号 US6404174(B1) 申请公布日期 2002.06.11
申请号 US20000697900 申请日期 2000.10.27
申请人 ADTRAN, INC. 发明人 BOUDREAUX, JR. RALPH R.;ROBINSON STEVEN M.;MCGARY JOHN S.
分类号 G11C16/10;G11C16/30;H02M3/155;(IPC1-7):G05F1/40 主分类号 G11C16/10
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