| 摘要 |
In a semiconductor device, a source diffusion layer is formed in a substrate, and a drain extended diffusion layer is formed in the substrate. A drain diffusion layer is formed in the extended drain diffusion layer. A reverse conductive type diffusion layer is formed adjacent to the drain diffusion layer in the extended drain diffusion layer. The reverse conductive type diffusion layer has a conductive type opposite to that of the extended drain diffusion layer. A main gate region is formed between the source diffusion layer and the drain extended diffusion layer on the substrate. A sub-gate region is formed between the reverse conductive type diffusion layer and the drain diffusion layer and on the extended drain diffusion layer.
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