发明名称 Method for chemical mechanical polishing
摘要 A semiconductor wafer is polished by a method which avoids constant instantaneous relative velocity between the wafer and an abrasive medium. The wafer is held by a tooling head and is contacted by an abrasive pad which is fixedly attached to a table. At least one of the tooling head and the table is movable relative to the other. A controller governs movement of the tooling head and/or the table according to a predetermined polishing pattern to initially effect a uniform instantaneous relative velocity between the wafer and the abrasive pad. The wafer is held by the tooling head in an initial orientation with respect to the abrasive pad. By changing the orientation of the wafer with respect to the abrasive pad, the instantaneous relative velocity changes for at least some point on the wafer.
申请公布号 US6402595(B1) 申请公布日期 2002.06.11
申请号 US20000610820 申请日期 2000.07.06
申请人 RODEL HOLDINGS INC. 发明人 FIESSER FREDERICK H.
分类号 B24B37/04;(IPC1-7):B24B1/00 主分类号 B24B37/04
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