发明名称 |
MOSFET power device manufactured with reduced number of masks by fabrication simplified processes |
摘要 |
This invention discloses a semiconductor substrate supports a semiconductor power device. The semiconductor substrate includes a plurality of polysilicon segments disposed over a gate oxide layer including two outermost segments and inner segments wherein each of the inner segments functioning as a gate and the two outermost segments functioning as a field pate and an equal potential ring separated by an oxide-plug gap having an aspect ratio greater or equal to 0.5. Each of the inner segments functioning as a gate having a side wall spacer surrounding edges of the inner segments, and the oxide plug gap being filled with an oxide plug for separating the field plate from the equal potential ring. A plurality of power transistor cells disposed in the substrate for each of the gates covered by an overlying insulation layer having a plurality of contact openings defined therein. A plurality of metal segments covering the overlying insulation layer and being in electric contact with the power transistor cells through the contact openings. A plurality of deep-and-narrow gaps between the metal segments wherein each gap having an aspect ratio equal or greater than 0.5. A passivation layer disposed in the deep-and-narrow gaps between the metal segments having a thickness substantially the same as the metal segments for blocking mobile ions from entering into the power transistor cells.
|
申请公布号 |
US6404025(B1) |
申请公布日期 |
2002.06.11 |
申请号 |
US19970942885 |
申请日期 |
1997.10.02 |
申请人 |
MAGEPOWER SEMICONDUCTOR CORP. |
发明人 |
HSHIEH FWU-IUAN;TSUI YAN MAN |
分类号 |
H01L21/336;H01L29/06;H01L29/40;H01L29/78;(IPC1-7):H01L29/76;H01L29/94;H01L31/062;H01L31/113 |
主分类号 |
H01L21/336 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|