发明名称 |
Semiconductor light emitting device and method for manufacturing the same |
摘要 |
At least a one conductivity type nanostructure PS layer whose thickness is controlled, and the opposite conductivity type nanostructure PS layer and a one conductivity type mesostructure PS layer arranged in contact with both these sides are comprised. Since the one conductivity type nanostructure PS layer is formed by anodizing the non-degenerate n-type crystalline silicon layer whose thickness is established in advance, the thickness which can provides a maximum luminescence efficiency can be obtained correctly. Then a semiconductor light emitting device whose luminescence efficiency is improved without increasing an unnecessary series resistance is provided. An inexpensive semiconductor light emitting device having a large light emitting area can be provided, since silicon wafer having a large diameter can be employed as the material for light emission.
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申请公布号 |
US6403391(B1) |
申请公布日期 |
2002.06.11 |
申请号 |
US20000481075 |
申请日期 |
2000.01.11 |
申请人 |
KOKUSAI DENSHIN DENWA KABUSHIKI-KAISHA |
发明人 |
NISHIMURA KOHSUKE;NAGAO YASUYUKI |
分类号 |
H01L33/34;(IPC1-7):H01L21/00 |
主分类号 |
H01L33/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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