发明名称 |
Source/drain doping technique for ultra-thin-body SOI MOS transistors |
摘要 |
An ultra-large-scale integrated (ULSI) circuit includes MOSFETs on an SOI substrate. The MOSFETs include elevated source and drain regions. The elevated source and drain regions are amorphized before doping. Neutral ion species can be utilized to amorphize the elevated source and drain region. Dopants are activated in a low-temperature rapid thermal anneal process.
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申请公布号 |
US6403433(B1) |
申请公布日期 |
2002.06.11 |
申请号 |
US19990397217 |
申请日期 |
1999.09.16 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
YU BIN;KLUTH JONATHAN;ISHIDA EMI |
分类号 |
H01L21/336;H01L29/786;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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