发明名称 |
Circuit for simulating zero cut-in voltage diode and rectifier having zero cut-in voltage characteristic |
摘要 |
There is disclosed a circuit for simulating zero cut-in voltage diode and a rectifier having zero cut-in voltage characteristic. The MOS transistors manufactured by the CMOS process are used as circuit components and are properly biased so as to provide the rectifying capability, and thus are used as a rectifying diode. Furthermore, with a proper bias, the rectifying diode has zero cut-in voltage and a low current loss, and thus a high efficient rectifier can be implement.
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申请公布号 |
US6404268(B1) |
申请公布日期 |
2002.06.11 |
申请号 |
US20000739704 |
申请日期 |
2000.12.20 |
申请人 |
SUNPLUS TECHNOLOGY CO., LTD. |
发明人 |
HUNG HSI-HSIEN;LEE HSIN CHOU |
分类号 |
H02M7/217;H02M7/219;(IPC1-7):H02M7/00 |
主分类号 |
H02M7/217 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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