发明名称 Circuit for simulating zero cut-in voltage diode and rectifier having zero cut-in voltage characteristic
摘要 There is disclosed a circuit for simulating zero cut-in voltage diode and a rectifier having zero cut-in voltage characteristic. The MOS transistors manufactured by the CMOS process are used as circuit components and are properly biased so as to provide the rectifying capability, and thus are used as a rectifying diode. Furthermore, with a proper bias, the rectifying diode has zero cut-in voltage and a low current loss, and thus a high efficient rectifier can be implement.
申请公布号 US6404268(B1) 申请公布日期 2002.06.11
申请号 US20000739704 申请日期 2000.12.20
申请人 SUNPLUS TECHNOLOGY CO., LTD. 发明人 HUNG HSI-HSIEN;LEE HSIN CHOU
分类号 H02M7/217;H02M7/219;(IPC1-7):H02M7/00 主分类号 H02M7/217
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