| 摘要 |
In a method for manufacturing a semiconductor device, a first insulation film is grown on a semiconductor substrate, a first interconnect is formed thereover, and a second insulation film is grown over the first insulation film, including the first interconnect. A first connecting via hole, disposed at an edge part of the first interconnect, and a second connecting via hole, disposed at the center part thereof, are then formed, a metal film being additionally grown on the second insulation film, after which chemical metal polishing is used to remove the metal film, over which is formed a second interconnect.
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