发明名称 |
Double gate transistor having a silicon/germanium channel region |
摘要 |
A method of manufacturing an integrated circuit with a channel region containing germanium. The method includes providing an amorphous semiconductor material including germanium, crystallizing the amorphous semiconductor material, and doping to form a source location and a drain location. The semiconductor material containing germanium can increase the charge mobility associated with the transistor. A double gate structure can also be formed.
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申请公布号 |
US6403981(B1) |
申请公布日期 |
2002.06.11 |
申请号 |
US20000633209 |
申请日期 |
2000.08.07 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
YU BIN |
分类号 |
H01L21/336;H01L21/337;H01L29/786;H01L29/80;(IPC1-7):H01L29/04;H01L31/20;H01L31/036;H01L31/037 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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