Method for fabricating storage capacitor using high dielectric constant material

摘要

A method for manufacturing a semiconductor device by laminating a plurality of ruthenium-type conductive electrodes and a dielectric film having a perovskite structure, includes forming a first conductive electrode at the semiconductor substrate, forming a first area where elements constituting the first conductive electrodes and elements constituting a first dielectric film are melded, forming a transitional layer by performing a heat treatment on the first meld area within a non-oxidizing atmosphere and forming the first dielectric film on the first conductive electrode. Accordingly, a transitional layer having a consistent composition can be formed with a high degree of efficiency at the interface of the ruthenium-type electrode and the dielectric substance having a perovskite structure, so that a capacitor structure employing a very thin dielectric film having a high dielectric constant can be produced with ease and at low cost.