发明名称 Semiconductor device having a protruding bump electrode
摘要 A semiconductor device includes at least one bump electrode for inputting and outputting signals to and from the semiconductor device. The bump electrode is positioned above a semiconductor substrate with an electrode pad and metal layer disposed therebetween. A resin film covers a surface of the semiconductor substrate except at a top area of the bump electrode. The bump electrode projects a sufficient distance above a top surface of the resin film so that heat induced defects are reduced and pressure exerted on a top area of the bump electrode is absorbed to suppress occurrence of cracks in the resin film.
申请公布号 US6404051(B1) 申请公布日期 2002.06.11
申请号 US19950409933 申请日期 1995.03.23
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 EZAWA HIROKAZU;MIYATA MASAHIRO
分类号 H01L21/56;H01L21/321;H01L21/60;H01L23/31;H01L23/485;(IPC1-7):H01L29/40 主分类号 H01L21/56
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