发明名称 |
Semiconductor device having a protruding bump electrode |
摘要 |
A semiconductor device includes at least one bump electrode for inputting and outputting signals to and from the semiconductor device. The bump electrode is positioned above a semiconductor substrate with an electrode pad and metal layer disposed therebetween. A resin film covers a surface of the semiconductor substrate except at a top area of the bump electrode. The bump electrode projects a sufficient distance above a top surface of the resin film so that heat induced defects are reduced and pressure exerted on a top area of the bump electrode is absorbed to suppress occurrence of cracks in the resin film.
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申请公布号 |
US6404051(B1) |
申请公布日期 |
2002.06.11 |
申请号 |
US19950409933 |
申请日期 |
1995.03.23 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
EZAWA HIROKAZU;MIYATA MASAHIRO |
分类号 |
H01L21/56;H01L21/321;H01L21/60;H01L23/31;H01L23/485;(IPC1-7):H01L29/40 |
主分类号 |
H01L21/56 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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