| 摘要 |
A base layer (7) of electrode made of at least a metal selected from V, Nb, Zr, and Cr or an alloy containing such metal on an n-type GaN compound semiconductor layer (2). Further, a main electrode layer made (8) of other metal is formed on the base layer (7). Then, an n electrode is formed by subjecting the semiconductor layer (2), the base layer (7), and the main electrode layer (8) to a heat treatment. |
