发明名称 PLASMA PROCESSING APPARATUS
摘要 PURPOSE: To provide a plasma processing apparatus which is easy to control ion irradiation energy to a work, and plasma processing on the work is evenly performed at the time of plasma excitation by microwave. CONSTITUTION: A slot antenna plate 7 is disposed at the chamber inside 13 of a second dielectric 5 for irradiating microwave into the chamber inside 13. The antenna plate 7 comprises dielectric, and also has a slot 7a for inducing the microwave into the chamber inside 13.
申请公布号 KR20020043446(A) 申请公布日期 2002.06.10
申请号 KR20010075753 申请日期 2001.12.03
申请人 OHMI TADAHIRO;SHARP CORPORATION 发明人 HIRAYAMA MASAKI;OHMI TADAHIRO;YAMAMOTO NAOKO;YAMAMOTO TATSUSHI
分类号 H05H1/46;C23F4/00;H01J37/32;H01L21/205;H01L21/302;H01L21/3065;(IPC1-7):H05H1/46 主分类号 H05H1/46
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