| 摘要 |
<p>Edge termination for a silicon carbide Schottky rectifier is provided by including a silicon carbide epitaxial region (16) on a voltage blocking layer (14) of the Schottky rectifier and adjacent a Schottky contact (18) of the silicon carbide Schottky rectifier. The silicon carbide epitaxial layer (16) may have a thickness and a doping level so as to provide a charge in the silicon carbide epitaxial region based on the surface doping of the blocking layer (14). The silicon carbide epitaxial region (16) may form a non-ohmic contact with the Schottky contact (18). The silicon carbide epitaxial region (16) may have a width of from about 1.5 to about 5 times the thickness of the blocking layer (14). Schottky rectifiers with such edge termination and methods of fabricating such edge termination and such rectifiers are also provided.</p> |
