发明名称 Fehlerdiagnosevorrichtung für CMOS-integrierte Schaltungen und Diagnoseverfahren
摘要 A failure diagnosis apparatus is provided which predicts failure locations in a CMOS integrated circuit in which an Iddq has been discovered, this apparatus having a test pattern storage unit 1 for storing test patterns used to perform a functional test of the CMOS integrated circuit, an LSI tester 3 which performs a functional test and an Iddq test on the CMOS integrated circuit based on the test patterns, a test results storage unit 6 to store test results, a circuit data storage unit 2 to store various information with regard to the device under test, a logic simulator 5 for receiving the above-noted test patterns and circuit data and performing a logic simulation of the internal operation of the circuit, a simulation results storage unit 7, and a failure location judgment unit 8 for outputting the diagnosis results based on test results and simulation results. This diagnosis apparatus predicts short circuit failures between signal lines and between a signal line and either a power supply line or a ground line, based, on the results of a simulation of internal circuit signal values at a point in time at which a test pattern is applied for which an abnormality is not detected in an Iddq test. <IMAGE>
申请公布号 DE69712236(D1) 申请公布日期 2002.06.06
申请号 DE1997612236 申请日期 1997.01.13
申请人 NEC CORP., TOKIO/TOKYO 发明人 SAKAGUCHI, KAZUHIRO
分类号 G01R31/30;G01R31/3183;G06F11/22;G06F11/26;(IPC1-7):G06F11/24 主分类号 G01R31/30
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