| 发明名称 |
Method of manufacturing flash memory |
| 摘要 |
The present invention forms a protection layer of doped amorphous silicon or amorphous silicon on a semiconductor substrate in which a control gate is formed in a stack structure of doped poly Si and etches only a given portion of the protection layer in a subsequent process to form a contact hole. Therefore, the present invention can prevent oxidization of a given portion of WSix due to exposed WSix.
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| 申请公布号 |
US2002068439(A1) |
申请公布日期 |
2002.06.06 |
| 申请号 |
US20010998339 |
申请日期 |
2001.12.03 |
| 申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
DONG CHA DEOK;PARK SANG WOOK;PARK SE HO |
| 分类号 |
H01L27/115;H01L21/336;H01L21/4763;H01L21/768;H01L21/8247;H01L29/788;(IPC1-7):H01L21/476 |
主分类号 |
H01L27/115 |
| 代理机构 |
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