VIA FIRST DUAL DAMASCENE PROCESS FOR COPPER METALLIZATION
摘要
An interconnection pattern is formed over the surface of a silicon wafer in which both the vias and the trenches of the pattern are filled with copper. The process of filling the vias and trenches involves use of a silicon nitride film (24) as an etch stop and the filling of the vias with an anti-reflection coating (30).
申请公布号
WO0203457(A3)
申请公布日期
2002.06.06
申请号
WO2001US21161
申请日期
2001.07.02
申请人
INFINEON TECHNOLOGIES NORTH AMERICA CORP.;INTERNATIONAL BUSINESS MACHINES CORPORATION
