Ferroelectric memory and manufacturing method thereof

摘要

A ferroelectric memory includes first and second plugs respectively connected to one and the other of source/drain regions of the transistor formed on a semiconductor wafer. A first capacitor electrode is connected to the first plug and located at a position above the transistor. The first capacitor electrode includes first and second capacitor faces on the second plug side and a side reverse thereto, respectively. A ferroelectric film is disposed on the first capacitor face. A second capacitor electrode is connected to the second plug and located at a position above the transistor. The second capacitor electrode is disposed on the first capacitor face through the ferroelectric film.