发明名称 |
Negative Ion implant mask formation for self-aligned, sublithographic resolution patterning for single-sided vertical device formation |
摘要 |
A process for fabricating a single-sided semiconductor deep trench structure filled with polysilicon trench fill material includes the following steps. Form a thin film, silicon nitride, barrier layer over the trench fill material. Deposit a thin film of an amorphous silicon masking layer over the barrier layer. Perform an angled implant into portions of the amorphous silicon masking layer which are not in the shadow of the deep trench. Strip the undoped portions of the amorphous silicon masking layer from the deep trench. Then strip the newly exposed portions of barrier layer exposing a part of the trench fill polysilicon surface and leaving the doped, remainder of the amorphous silicon masking layer exposed. Counterdope the exposed part of the trench fill material. Oxidize exposed portions of the polysilicon trench fill material, and then strip the remainder of the masking layer.
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申请公布号 |
US2002068399(A1) |
申请公布日期 |
2002.06.06 |
申请号 |
US20000730674 |
申请日期 |
2000.12.06 |
申请人 |
DIVAKARUNI RAMA;KUDELKA STEPHAN;TEWS HELMUT;MCSTAY IRENE;LEE KIL-HO;SCHROEDER UWE |
发明人 |
DIVAKARUNI RAMA;KUDELKA STEPHAN;TEWS HELMUT;MCSTAY IRENE;LEE KIL-HO;SCHROEDER UWE |
分类号 |
H01L21/8242;(IPC1-7):H01L21/824;H01L21/336 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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