发明名称 |
LOW DEFECT DENSITY, THIN-LAYER, SOI SUBSTRATES |
摘要 |
Methods of producing buried insulating layers in semiconductor substrates are disclosed whereby a dose of selected ions is implanted into a substrate to form a buried precursor layer below an upper layer of the substrate, followed by oxidation of the substrate in an atmosphere having a selected oxygen concentration to form an oxide surface layer. The oxidation is performed at a temperature and for a time duration such that the formation of the oxide layer causes the injection of a controlled number of atoms of the substrate from a region proximate to an interface between the newly formed oxide layer and the substrate into the upper regions of the substrate to reduce strain. A high temperature annealing step is then performed to produce the insulating layer within the precursor layer. |
申请公布号 |
WO0245132(A2) |
申请公布日期 |
2002.06.06 |
申请号 |
WO2001US44689 |
申请日期 |
2001.11.28 |
申请人 |
IBIS TECHNOLOGY CORPORATION |
发明人 |
ANC, MARIA, J.;DONALD, ROBERT, P. |
分类号 |
H01L21/762 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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