发明名称 THIN FILMS FOR MAGNETIC DEVICES
摘要 Methods are provided for forming uniformly thin layers in magnetic devices. Atomic layer deposition (ALD) can produce layers that are uniformly thick on an atomic scale. Magnetic tunnel junction dielectrics, for example, can be provided with perfect uniformity in thickness of 4 monolayers or less. Furthermore, conductive layers, including magnetic 12, 16 and non-magnetic layers 14, can be provided by ALD without spiking and other non-uniformity problems. The disclosed methods include forming metal oxide layers by multiple cycles of ALD and subsequently reducing the oxides to metal. The oxides tend to maintain more stable interfaces during formation.
申请公布号 WO0245167(A2) 申请公布日期 2002.06.06
申请号 WO2001US44350 申请日期 2001.11.26
申请人 ASM MICROCHEMISTRY OY;ASM AMERICA, INC.;HUJANEN, JUHA;RAAIJMAKERS, IVO 发明人 HUJANEN, JUHA;RAAIJMAKERS, IVO
分类号 G01R33/09;C23C16/40;G11B5/39;H01F10/16;H01F10/32;H01F41/22;H01F41/30;H01F41/32;H01L21/8246;H01L27/105;H01L27/22;H01L29/82;H01L43/08;H01L43/12 主分类号 G01R33/09
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