发明名称 |
Method for removing carbon-rich particles adhered on the exposed copper surface of a copper/low k dielectric dual damascene structure |
摘要 |
A method for removing carbon-rich particles adhered on the exposed copper surface of a copper/low k dielectric dual damascene structure is provided. A barrier layer and a barrier-CMP stopping layer are formed between the copper layer and the low k dielectric layer of the dual damascene structure. After a Cu-CMP process and a barrier CMP process are completed, a chemical buffing polishing process using a basic solution under a downward force of about 0.5 to 3 psi is performed to remove carbon-rich particles adhered on the exposed copper surface due to the low k dielectric having at least 90% carbon element being exposed and then polished during the Cu-CMP process and the barrier CMP process, which results from a dishing phenomenon of the copper layer occurring during the two CMP processes. Finally, a post chemical mechanical polishing cleaning process is performed to remove away dirt left on the exposed copper surface.
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申请公布号 |
US2002068435(A1) |
申请公布日期 |
2002.06.06 |
申请号 |
US20000729201 |
申请日期 |
2000.12.05 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
TSAI TENG-CHUN;HSU CHIA-LIN;WEI YUNG-TSUNG;YANG MING-SHENG |
分类号 |
H01L21/02;H01L21/302;H01L21/311;H01L21/321;H01L21/461;H01L21/4763;H01L21/768;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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