发明名称 High density recording, dual stripe MR (DSMR) head and method for achieving anti-parallel exchange coupling with one biased layer having low coercivity
摘要 A method of forming a DSMR head comprises the steps of forming a first ferromagnetic (FM) strip on a substrate with a first anti-FM (AFM) pinning layer over a portion of the first ferromagnetic strip, the first AFM pinning layer being composed of a first material. Then perform a first high temperature annealing step. Form a non-magnetic layer over the strip and the pinning layer. Then form a second FM strip on the non-magnetic layer, and form a second AFM pinning layer over a portion of the second FM strip, with a second AFM pinning layer being composed identically of the first material. Perform a second high temperature annealing step on the first and second FM strips and the first and second pinning layers and the intermediate non-magnetic layer in the presence of a second magnetic field antiparallel to the first magnetic field. A head with NiFe FM strips and FeMn or MnPt, etc, AFM layers for both strips is provided.
申请公布号 US2002067578(A1) 申请公布日期 2002.06.06
申请号 US20010946986 申请日期 2001.09.06
申请人 HEADWAY TECHNOLOGIES, INC. 发明人 LIAO SIMON H.;LI MIN
分类号 G11B5/31;G11B5/39;(IPC1-7):G11B5/127;G11B5/33;B05D5/12 主分类号 G11B5/31
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