发明名称 |
High density recording, dual stripe MR (DSMR) head and method for achieving anti-parallel exchange coupling with one biased layer having low coercivity |
摘要 |
A method of forming a DSMR head comprises the steps of forming a first ferromagnetic (FM) strip on a substrate with a first anti-FM (AFM) pinning layer over a portion of the first ferromagnetic strip, the first AFM pinning layer being composed of a first material. Then perform a first high temperature annealing step. Form a non-magnetic layer over the strip and the pinning layer. Then form a second FM strip on the non-magnetic layer, and form a second AFM pinning layer over a portion of the second FM strip, with a second AFM pinning layer being composed identically of the first material. Perform a second high temperature annealing step on the first and second FM strips and the first and second pinning layers and the intermediate non-magnetic layer in the presence of a second magnetic field antiparallel to the first magnetic field. A head with NiFe FM strips and FeMn or MnPt, etc, AFM layers for both strips is provided.
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申请公布号 |
US2002067578(A1) |
申请公布日期 |
2002.06.06 |
申请号 |
US20010946986 |
申请日期 |
2001.09.06 |
申请人 |
HEADWAY TECHNOLOGIES, INC. |
发明人 |
LIAO SIMON H.;LI MIN |
分类号 |
G11B5/31;G11B5/39;(IPC1-7):G11B5/127;G11B5/33;B05D5/12 |
主分类号 |
G11B5/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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