发明名称 |
Chemical-mechanical planarization of barriers or liners for copper metallurgy |
摘要 |
A tantalum-based liner for copper metallurgy is selectively removed by chemical-mechanical planarization (CMP) in an acidic slurry of an oxidizer such as hydrogen peroxide, deionized water, a corrosion inhibitor such as BTA, and a surfactant such as Duponol SP, resulting in a high removal rate of the liner without appreciable removal of the exposed copper and with minimal dishing.
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申请公布号 |
US2002066234(A1) |
申请公布日期 |
2002.06.06 |
申请号 |
US20020051135 |
申请日期 |
2002.01.18 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
COTE WILLIAM J.;EDELSTEIN DANIEL C.;LUSTIG NAFTALI E. |
分类号 |
B24B37/00;C09C1/68;C09G1/02;C09K3/14;C09K13/00;C23F3/00;H01L21/304;H01L21/306;H01L21/321;H01L21/768;(IPC1-7):C09C1/68 |
主分类号 |
B24B37/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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