发明名称 |
Harzvergossenes Halbleiterbauteil und dessen Herstellungsverfahren |
摘要 |
The invention provides a resin sealing type semiconductor device and fabrication method thereof. The resin sealing type semiconductor device has good heat radiation characteristics and high reliability. A highly flexible wiring arrangement design is provided by using leads commonly. The resin sealing type semiconductor device includes an element mounting portion having an element mounting surface. A semiconductor element is bonded to the element mounting surface. A plurality of leads is provided and is separated from the semiconductor element, a frame lead is disposed between these leads and the semiconductor element and not in contact with either the semiconductor element or the leads. Wires are provided for electrical connections and a resin seals the element mounting portion, the semiconductor element, parts of the leads and the frame lead. <MATH> <MATH> |
申请公布号 |
DE69526543(D1) |
申请公布日期 |
2002.06.06 |
申请号 |
DE1995626543 |
申请日期 |
1995.06.21 |
申请人 |
SEIKO EPSON CORP., TOKIO/TOKYO |
发明人 |
OTSUKI, TETSUYA |
分类号 |
H01L23/28;H01L21/60;H01L23/29;H01L23/31;H01L23/433;H01L23/50 |
主分类号 |
H01L23/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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