发明名称 Harzvergossenes Halbleiterbauteil und dessen Herstellungsverfahren
摘要 The invention provides a resin sealing type semiconductor device and fabrication method thereof. The resin sealing type semiconductor device has good heat radiation characteristics and high reliability. A highly flexible wiring arrangement design is provided by using leads commonly. The resin sealing type semiconductor device includes an element mounting portion having an element mounting surface. A semiconductor element is bonded to the element mounting surface. A plurality of leads is provided and is separated from the semiconductor element, a frame lead is disposed between these leads and the semiconductor element and not in contact with either the semiconductor element or the leads. Wires are provided for electrical connections and a resin seals the element mounting portion, the semiconductor element, parts of the leads and the frame lead. <MATH> <MATH>
申请公布号 DE69526543(D1) 申请公布日期 2002.06.06
申请号 DE1995626543 申请日期 1995.06.21
申请人 SEIKO EPSON CORP., TOKIO/TOKYO 发明人 OTSUKI, TETSUYA
分类号 H01L23/28;H01L21/60;H01L23/29;H01L23/31;H01L23/433;H01L23/50 主分类号 H01L23/28
代理机构 代理人
主权项
地址