发明名称 SEMICONDUCTOR ARTICLE AND METHOD OF MANUFACTURING THE SAME
摘要 A method comprises steps of forming a doped layer containing an element capable of controlling the conductivity type at least on one of the surfaces of a semiconductor substrate, modifying the surface of the doped layer into a porous state to obtain a porous layer thinner than the doped layer, forming a non-porous layer on the porous layer to prepare a first article, bonding said first article and a second article so as to produce a multilayer structure having said porous layer in the inside thereof, and separating said multilayer structure along said porous layer.
申请公布号 US2002068419(A1) 申请公布日期 2002.06.06
申请号 US20010920658 申请日期 2001.08.03
申请人 SAKAGUCHI KIYOFUMI;YONEHARA TAKAO 发明人 SAKAGUCHI KIYOFUMI;YONEHARA TAKAO
分类号 H01L21/20;H01L21/762;(IPC1-7):H01L21/30;H01L21/46;H01L21/76;H01L21/31;H01L21/469 主分类号 H01L21/20
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