发明名称 |
SEMICONDUCTOR ARTICLE AND METHOD OF MANUFACTURING THE SAME |
摘要 |
A method comprises steps of forming a doped layer containing an element capable of controlling the conductivity type at least on one of the surfaces of a semiconductor substrate, modifying the surface of the doped layer into a porous state to obtain a porous layer thinner than the doped layer, forming a non-porous layer on the porous layer to prepare a first article, bonding said first article and a second article so as to produce a multilayer structure having said porous layer in the inside thereof, and separating said multilayer structure along said porous layer.
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申请公布号 |
US2002068419(A1) |
申请公布日期 |
2002.06.06 |
申请号 |
US20010920658 |
申请日期 |
2001.08.03 |
申请人 |
SAKAGUCHI KIYOFUMI;YONEHARA TAKAO |
发明人 |
SAKAGUCHI KIYOFUMI;YONEHARA TAKAO |
分类号 |
H01L21/20;H01L21/762;(IPC1-7):H01L21/30;H01L21/46;H01L21/76;H01L21/31;H01L21/469 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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