发明名称 |
Sidewalls as semiconductor etch stop and diffusion barrier |
摘要 |
Methods and apparatus of forming a semiconductor device using pedestals and sidewalls. The pedestals and sidewalls may provide an etch stop and/or a diffusion barrier during manufacture of a semiconductor device. Processes of forming diode connected vertical cylindrical field effect devices are disclosed to exemplify the use of the pedestals and/or sidewalls. A system for forming the pedestals and sidewalls is described.
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申请公布号 |
US2002066939(A1) |
申请公布日期 |
2002.06.06 |
申请号 |
US20010982855 |
申请日期 |
2001.10.22 |
申请人 |
METZLER RICHARD A. |
发明人 |
METZLER RICHARD A. |
分类号 |
H01L29/861;H01L21/308;H01L21/329;H01L21/337;H01L21/8234;H01L27/02;H01L29/808;(IPC1-7):H01L23/58 |
主分类号 |
H01L29/861 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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