| 摘要 |
PURPOSE: A code-addressable memory cell driving circuit is provided to connect one high voltage switch to one word line, and makes each word line be selected in response to each program signal. CONSTITUTION: A code-addressable memory cell driving circuit makes many code-addressable memory cells(M21-M24) be shared in many blocks. One code-addressable memory cell of each block shares a word line. In order to program the code-addressable memory cell, high voltage switches(100,200,300,400) are connected to the word line, and applies a high voltage according to each different program signal. One block(21) includes many CAM cells(M21-M24) sharing a bit line. The bit lines are input to a first sense-amp(201) via a first NMOS transistor(N21) driven by a reading signal(READ).
|
