SEMICONDUCTOR DEVICE MANUFACTURING PROCESS INCLUDING CONTACT HOLE FORMATION PROCESSING USING CH2F2 GAS

摘要

PURPOSE: A semiconductor device manufacturing process is provided to prevent a damage of an upper portion of a contact hole due to a damage of sidewalls of a mask by forming the contact hole using a CH2F2 gas. CONSTITUTION: An oxide(19) is etched and a polymer(25) is simultaneously formed on an upper portion and sidewalls of a photoresist mask(21) by performing a plasma etch processing using a CH2F2 gas when forming a contact-type OCS(One Cylinder Storage) hole in order to form a micro-contact hole of a semiconductor device. Then, the oxide(19) is etched, while stopping the supply of the CH2F2 gas. In result, the polymer(25) deposited on the upper portion and sidewalls of the photoresist mask(21) prevent a damage of the contact hole due to a damage of the upper portion and sidewalls of the photoresist mask(21).