发明名称 |
Method of stopping ions and small debris in extreme-ultraviolet and soft x-rays plasma sources by using krypton |
摘要 |
<p>A method and device for filtering ions and small debris by using krypton or its mixtures to fill the chamber of the EUV-radiation source. The method can be combined with mechanical methods of filtering debris particles with large size (greater than one micron) and allows to obtain plasma EUV-radiation without polluting debris and to extend the useful life of the mirrors of a microlithography apparatus. <IMAGE></p> |
申请公布号 |
EP1211918(A1) |
申请公布日期 |
2002.06.05 |
申请号 |
EP20010830644 |
申请日期 |
2001.10.11 |
申请人 |
ENEA ENTE PER LE NUOVE TECNOLOGIE |
发明人 |
FLORA, FRANCESCO;ZHENG, CHENGEN;MEZI, LUCA |
分类号 |
G03F7/20;H05G2/00;(IPC1-7):H05G2/00 |
主分类号 |
G03F7/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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