| 摘要 |
PURPOSE: A fabrication method of semiconductor devices is provided to improve a step coverage by selectively removing an upper electrode using an isotropic plasma after forming the upper electrode. CONSTITUTION: A first oxide(32) and a first nitride(33) are sequentially formed on a substrate(31). After forming a contact hole by selectively etching the first nitride(33) and oxide(32) and depositing a first polysilicon layer, a polysilicon plug(35) is filled into the contact hole by a CMP(Chemical Mechanical Polishing). After depositing and selectively etching a second oxide(36), lower electrodes(37) are formed by selectively etching a second polysilicon layer deposited on the substrate(31) by a photolithographic and an etching processes. A dielectric(38) and a third polysilicon layer are formed on the entire surface of the resultant structure. An upper electrode(39) is formed by selectively etching the third polysilicon layer and the dielectric(38). At this time, the edge of the upper electrode(39) are roundly formed using an isotropic plasma.
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