CONDUCTIVE LAYER FILLED TRENCH ISOLATION SEMICONDUCTOR DEVICE AND FORMATION METHOD THEREOF

摘要

PURPOSE: A conductive layer filled trench isolation semiconductor device and a formation method thereof are provided to improve an operating speed and the efficiency by reducing an inverse narrow width effect. CONSTITUTION: A trench isolation semiconductor device comprises an upper part having a silicon nitride(33) and a silicon oxide(35), a side part made of a silicon nitride oxidation layer(20), and a conductive layer(31) made of a dopant doped polysilicon connected to a substrate(10) at the bottom part of the conductive layer(31) and surrounded with the silicon nitride(33) and the silicon nitride oxidation layer(20). At this time, active regions(13) having a source and a drain region are completely isolated by connecting the conductive layer(31) and the substrate(10), thereby preventing an inverse narrow width effect, so that the property can be improved.