PHOTORESIST COMPOSITION FOR IMPROVING STAIN

摘要

PURPOSE: Provided is a photoresist composition for improving a pin stain, which contains a solvent containing 3-methoxy butyl acetate, n-butyl acetate, and gamma-butyrol lactone. CONSTITUTION: The photoresist composition contains the solvent containing 25-85wt% of 3-methoxy butyl acetate, 15-75wt% of n-butyl acetate, and 1-10wt% of gamma-butyrol lactone, a fluorine-based surfactant such as a fluorinated acrylic copolymer having a molecular weight of 3000-8000, and a polyester-based resin as an additive, such as poly vinyl methyl ether.