| 发明名称 |
A method for fabricating a III-V nitride film |
| 摘要 |
<p>On a given substrate is formed an underfilm including a surface of concave-convex structure in which 50% or over is occupied by the flat region and made of a III nitride including 50 atomic percentages or over of Al element for all of the III elements constituting the III nitride. Then, a desired III nitride film is formed on the underfilm by a normal MOCVD method.</p> |
| 申请公布号 |
EP1211715(A2) |
申请公布日期 |
2002.06.05 |
| 申请号 |
EP20010126945 |
申请日期 |
2001.11.13 |
| 申请人 |
NGK INSULATORS, LTD. |
发明人 |
ASAI, KEIICHIRO;SHIBATA, TOMOHIKO;NAKAMURA, YUKINORI;TANAKA, MITSUHIRO |
| 分类号 |
H01L21/20;C23C16/02;C23C16/30;C30B25/18;H01L21/205;H01L33/12;H01L33/16;H01L33/22;H01L33/32;(IPC1-7):H01L21/205 |
主分类号 |
H01L21/20 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
