| 摘要 |
PURPOSE: A method for forming a pattern using resist materials containing a new amine compound imparting excellent resolution and focus margin extending effect is provided. The resist materials have an excellent effect on preventing a resist film from thinning. CONSTITUTION: A positive resist material contains a novel amine compound represented by the formula(1), organic solvent, base resin which is alkali insoluble or poorly water soluble resin having an acidic functional group protected by an acid-labile group and becomes alkali solubility when the acid-labile group is eliminated, and an acid generator. In formula(1), R1 is C2-20 straight or branched alkylene and may contain one or several carbonyl, ether, ester or sulphide, R2 is C1-10 straight or branched alkylene, R3 is C1-20 straight, branched or cyclic alkyl or alkoxy and may contain hydroxy, ether, carbonyl, ester, lactone ring or carbonate, R2 and R3 form a ring with oxygen by bonding each other.
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