METHOD FOR FABRICATING CHIP TYPE SOLID ELECTROLYTIC CAPACITOR

摘要

PURPOSE: A method for fabricating a chip type solid electrolytic capacitor is provided to obtain a low ESR characteristic and a low impedance characteristic by using a high polymer layer as an electrolyte. CONSTITUTION: A dielectric oxide coating layer(5) is formed on an upper portion of a metallic foil. An insulator(3) having electric insulation and hardness is formed on an upper portion of the dielectric oxide coating layer(5) in order to protect the dielectric oxide coating layer(5). A first conductive layer(6) as a conductive polymer layer is overlapped on a part of the insulator(3) and the dielectric oxide coating layer(5) by using a dipping method. A second conductive layer(7) as a solid electrolytic layer is formed on an upper portion of the first conductive layer(6). Carbon(8) and silver paste(9) are formed on the second inductive layer(7) in order to be connected electrically to a lead frame.