| 摘要 |
<p>PURPOSE:To provide the manufacturing method for a nonvolatile semiconductor memory storage, suitable for a NAND type E<2>PROM, with which the size of memory cell can be made small without increasing the number of working processes. CONSTITUTION:An exposing operation is conducted using a photomask 30 with the phase shifter having a transmitted light phase inverted part of prescribed pattern, a resist film is processed by the microscopic pattern corresponding to the boundary part of the transmitted light phase inverted part 32 and other part, a thin film layer is processed using the resist film, and gate electrodes 12 of microscopic intervals are formed by processing the thin film layer using the above-mentioned resist film. The MOS type memory cell 14, to be formed by the gate electrode 12, is a NAND type memory cell which is series-connected for every plural memory cells, for example. The MOS type memory cell 14 may be composed of an E<2>PROM memory cell having a floating gate 8.</p> |
