发明名称 |
Method of repairing defective tunnel junctions |
摘要 |
A typical MRAM device includes an array of memory cells, each memory cell includes a spin dependent tunneling junction. The defective tunnel junction may be repaired by voltage-exercising the tunnel junction. Nominal resistance of defective tunnel junction is increased by a voltage-exercising method. The voltage-exercising method is performed by applying one or more voltage cycles to the defective tunnel junction.
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申请公布号 |
US6400600(B1) |
申请公布日期 |
2002.06.04 |
申请号 |
US20000675775 |
申请日期 |
2000.09.30 |
申请人 |
HEWLETT-PACKARD COMPANY |
发明人 |
NICKEL JANICE H.;ANTHONY THOMAS C. |
分类号 |
G01R31/28;G11C11/14;G11C11/15;H01L21/8246;H01L27/105;H01L43/08;(IPC1-7):G11C11/14 |
主分类号 |
G01R31/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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