发明名称 Semiconductor device and method for manufacturing same
摘要 A method of making a semiconductor chip 1 having a first electrodes 11, 12 on main surface 1a thereof, a second electrode 13 made of a conductive resin electrode having a base portion 131 in contact with a surface 1b opposite to the main surface 1a of the semiconductor chip 1, and a side portion 132 extended from one end portion of the base portion 131 in the direction toward the main surface 1a of the semiconductor chip 1, wherein an end part of the side portion 132 of the second electrode 13 is exposed on the same side as the first electrodes 11, 12.
申请公布号 US6400017(B2) 申请公布日期 2002.06.04
申请号 US20010961317 申请日期 2001.09.25
申请人 NEC CORPORATION 发明人 SAKAZAKI ATSUSHI;YOSHITAKE TOMONOBU
分类号 H01L21/301;H01L21/56;H01L21/60;H01L21/68;H01L23/31;H01L25/10;H01L25/18;(IPC1-7):H01L27/10 主分类号 H01L21/301
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