METHOD FOR FORMING POLYCRYSTALLINE SILICON THIN FILM

摘要

PURPOSE: A method for forming polycrystalline silicon thin film having ultra-fine crystal grains and uniformed distribution in forming polycrystalline silicon thin film used in single electron tunneling devices is provided. CONSTITUTION: The method for forming polycrystalline silicon thin film comprises the steps of forming a SiO2 oxide film on a silicon substrate; forming an amorphous thin film on the oxide film by rapidly heating the substrate on which the oxide film is formed and injecting silicon contained gas onto the oxide film formed on the silicon substrate; and polycrystallizing the amorphous thin film by rapidly heating the substrate on which the amorphous thin film formed on the oxide film is formed at a reductive atmosphere, wherein the rapid heating of the substrate on which the oxide film is formed is performed at a temperature increasing rate of 100 deg.C/min or more, the rapid heating temperature is 560 to 620 deg.C, the silicon contained gas is SiH4, thickness of the amorphous thin film is 50 to 100 Å, the rapid heating of the substrate on which the amorphous thin film formed on the oxide film is formed is performed at a temperature increasing rate of 100 deg.C/sec or more, and the rapid heating of the substrate on which the amorphous thin film formed on the oxide film is formed is performed at a temperature of 900 to 1000 deg.C for 5 seconds or more.