| 摘要 |
PROBLEM TO BE SOLVED: To provide an ion beam sputtering apparatus which improves thickness uniformity of a formed film. SOLUTION: This apparatus comprises controlling on and off an ion beam 12 with which a target 11a is irradiated, by turning on and off grid voltage V1 and V2 applied on grids G1 and G2 provided in an ion source 2, and depositing particles 13 on a substrate S, which are sputtered from the target 11a when the target 11a is irradiated with the ion beam 12, to form a thin film with an uniform film thickness on the substrate S. Since the film formation is controlled on and off by turning the grid voltage V1 and V2 on and off, it starts and stops all at once on every area to be film formed of the substrate S. As a result, the thin film with the uniform film thickness can be formed.
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