| 摘要 |
PROBLEM TO BE SOLVED: To reduce defects of a gallium nitride single crystal and to develop a method for reducing a warpage of a single crystal substrate. SOLUTION: The method for producing a gallium nitride single crystal (comprises thickly growing gallium nitride by a hydride vapor phase epitaxy(HVPE) growing method on a sapphire substrate having fine asperities of which the projecting part size is >=30 nm and <=200 nm, and peeling the same from the sapphire substrate.
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