| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor microactuator high in rigidity at a heat insulation part and capable of reducing electric power consumption and its manufacturing method. SOLUTION: Grooves 14a, 14b for implanting polyimide resin 24 at a portion corresponding to the heat insulation parts 4a, 4b (g) to be formed later are formed on a main surface of a supporting base plate 1 by anisotropic etching (b). Then insulation layers 24a2, 24b2 (f) formed by a heat insulation forming process repeating predetermined times a basic process made of series of processes: application of the polyimide resin 24→exposure→development→curing are made to be the heat insulation layers 4a, 4b. The predetermined times are set such that the heat insulation lavers 4a, 4b with a desired thickness are formed.
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