| 摘要 |
A method for forming a resist pattern includes the steps of: forming an underlayer transparent film on a semiconductor substrate; forming a resist film on the transparent film to a thickness set to be m.lambd/2n2, where lambd is an exposure wavelength, n2 is a refractive index of the resist film, and m is an integer from 5 to 30; applying a water-soluble antireflection film on the resist film to a thickness set to be lambd/4n1, where n1 is a refractive index of the antireflection film; and exposing the resist film from above the antireflection film by a beam having a wavelength lambd and developing the resist film as well as removing the antireflection film.
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