发明名称 |
Semiconductor device having capacitor and method of manufacturing the same |
摘要 |
A semiconductor device having a capacitor. The capacitor includes a first electrode, a dielectric layer formed of a metal oxide layer including a Ta2O5 layer, and a second electrode composed of first and second metal nitride layers sequentially stacked. Each of the first and second metal nitride layers has a TiN layer and a WN layer. The second electrode of the capacitor is a double-layered structure having the first and second metal nitride layers, and thus annealing after forming the second electrode is performed at 750° C. or less, to thereby reduce an equivalent oxide thickness of the dielectric layer.
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申请公布号 |
US6399457(B2) |
申请公布日期 |
2002.06.04 |
申请号 |
US20010862733 |
申请日期 |
2001.05.21 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK BYUNG-LYUL;LEE MYOUNG-BUM;LEE HYEON-DEOK |
分类号 |
H01L27/108;H01L21/02;H01L21/316;H01L21/8242;(IPC1-7):H01L21/20 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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