| 摘要 |
Process for producing electrical connections on the surface of a semiconductor package containing an integrated-circuit chip and having metal electrical-connection regions on the surface of the package, consisting of: covering these connection regions with a first metal layer forming an anti-diffusion barrier; covering this first layer with an anti-oxidation second metal layer; and depositing a metal solder drop or solder ball on the second metal layer. The solder drop comprises an addition of metal particles in suspension which contain at least one of the metals of the first metal layer so as to produce a precipitate comprising these additional metal particles and at least partly the metal of the second metal layer, the precipitate remaining in suspension in the solder drop.
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