发明名称 |
Method of fabricating a semiconductor mesa device |
摘要 |
The invention is a method of fabricating a semiconductor device involving selectively etching at least a first semiconductor layer on a semiconductor wafer so as to perform a lateral taper etch in said layer, forming a second layer over the resulting etched region so as to planarize the etched area, and subsequently performing a second etch over a portion of the etched region so as to form a mesa geometry. This material allows device fabrication with a lateral taper, beneficial to monolithic integration of devices, such as expanded beam lasers, while reducing or eliminating unwanted increases in mesa width (mesa bulge) resulting from the lateral taper.
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申请公布号 |
US6399403(B1) |
申请公布日期 |
2002.06.04 |
申请号 |
US19990378032 |
申请日期 |
1999.08.20 |
申请人 |
AGERE SYSTEMS GUARDIAN CORP. |
发明人 |
ENG JULIE;LEVKOFF JEROME;MAZZATESTA ANTHONY D.;MICHEL ERICK JOHN;SUTRYN DANIEL CHRISTOPHER |
分类号 |
H01L33/00;H01S5/026;H01S5/10;H01S5/16;H01S5/20;H01S5/227;H01S5/343;(IPC1-7):H01L21/302;H01L21/00 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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